Arsenic incorporation in GaN during growth by molecular beam epitaxy

被引：6

作者：

Foxon, CT ^{[1
]}

Novikov, SV

Li, T

Campion, RP

Winser, AJ

Harrison, I

Kappers, MJ

Humphreys, CJ

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)02243-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied arsenic incorporation in GaN films grown by plasma-assisted molecular beam epitaxy. Depending on the growth conditions, arsenic in GaN either produces blue emission or GaNAs alloy formation occurs. A general growth model is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：510 / 514

页数：5

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