Arsenic incorporation in GaN during growth by molecular beam epitaxy

被引：6
作者：
Foxon, CT [1 ]
Novikov, SV
Li, T
Campion, RP
Winser, AJ
Harrison, I
Kappers, MJ
Humphreys, CJ
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
molecular beam epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02243-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied arsenic incorporation in GaN films grown by plasma-assisted molecular beam epitaxy. Depending on the growth conditions, arsenic in GaN either produces blue emission or GaNAs alloy formation occurs. A general growth model is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：510 / 514
页数：5
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