Preparation and characterization of copper indium disulfide films by facile chemical method

被引：37
作者：
Chen, Yunxia
He, Xin
Zhao, Xiujian
Song, Mingxia
Gu, Xingyong
机构：
[1] Wuhan Univ Technol, Key Lab Silicate Mat Sci & Engn, Minist Educ, Wuhan 430070, Hubei, Peoples R China
[2] Jingdezhen Ceram Inst, Jiangxi 333001, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 139卷 / 01期
关键词：
sulphides; thin films; inorganic compounds;
D O I：
10.1016/j.mseb.2007.01.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A convenient and low cost technology was employed to prepare copper indium disulfide thin films, which can be analogous to other chalcogenides. The designed precursor solutions with Cu/In ratio at 1.5:1, 1:1, and 1:1.5, respectively, were prepared and coated on the glass substrate by dip-withdrawing method. The thin films were characterized by XRD, SEM, UV-Vis-NIR spectrophotometer, NKD-7000W spectrophotometer, Raman microscope and wavelength dispersive XRF spectrometer. As a result, chalcopyrite-type CuInS2, is the dominant phase in final products. CuxS is also obtained as a minor phase composition. The as-prepared CuInS2 films are of high absorption coefficient of 2.65 x 10(5) cm(-1) at 400 nm and 1.7 x 10(5) cm(-1) at 600 nm. The calculated band gap values are 1.28-1.62 eV, according with the theoretical band gap of CuInS2. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：88 / 94
页数：7
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