Switching the fracture toughness of single-crystal ZnS using light irradiation

被引：10

作者：

Zhu, Tingting ^{[1
]}

Ding, Kuan ^{[1
]}

Oshima, Yu ^{[2
]}

Amiri, Anahid ^{[1
]}

Bruder, Enrico ^{[1
]}

Stark, Robert W. ^{[1
]}

Durst, Karsten ^{[1
]}

Matsunaga, Katsuyuki ^{[2
,3
]}

Nakamura, Atsutomo ^{[2
,4
]}

Fang, Xufei ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

[2] Nagoya Univ, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

[3] Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan

[4] Japan Sci & Technol Agcy JST, PRESTO, Chiyoda Ku, 7 Gobancho, Tokyo 1020076, Japan

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 15期

关键词：

36;

D O I：

10.1063/5.0047306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by similar to 45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.

引用

页数：5

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APPLIED PHYSICS LETTERS, 2020, 116 (11)

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