Surface sputtering in high-dose Fe ion implanted Si

被引：3
|
作者：
Ishimaru, Manabu [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 258卷 / 02期
关键词：
iron silicides; surface sputtering; transmission electron microscopy; Rutherford backscattering spectroscopy;
D O I：
10.1016/j.nimb.2007.01.285
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(001) substrates were implanted at 350 degrees C with 120 keV Fe ions to fluences ranging from 0.1 X 10(17) to 4.0 x 10(17)/cm(2). Extensive damage induced by ion implantation was observed inside the substrate below 1.0 X 10(17)/cm(2), while a continuous iron silicide layer was formed at 4.0 x 10(17)/cm(2). It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 X 10(17) and 4.0 x 10(17)/cm(2) due to surface sputtering during implantation. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：490 / 492
页数：3
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