Monomode channel waveguide in KTiOPO4 crystal produced by Rb+ ion exchange combined with Si+ ion implantation

被引:5
作者
Wang, L. -L. [1 ]
Wang, K. -M. [2 ]
Liu, X. -Z. [3 ]
Lu, Q. -M. [4 ]
机构
[1] Jining Univ, Dept Phys, Qufu 273155, Peoples R China
[2] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[3] Shandong Acad Sci, Inst Automat, Jinan 250100, Peoples R China
[4] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Peoples R China
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2010年 / 99卷 / 1-2期
基金
中国国家自然科学基金;
关键词
FABRICATION; KTP; PROPAGATION; PLANAR;
D O I
10.1007/s00340-010-3935-8
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A novel ion exchanged channel KTiOPO4 waveguide formation technique is introduced, which can avoid a metal mask being dissolved in an ion exchanged molten salt. Rb+ ion exchange (340A degrees C, 30 min) was first applied to a KTP sample to produce a planar waveguide substrate, and then Si+ ion implantation (3.0 MeV and 1.5 MeV with doses of 1x10(15) ions/cm(2) and 6x10(14) ions/cm(2), respectively) was carried out to construct channel stripes on the planar waveguide surface that has been deposited by a specially designed photoresist mask. The two-dimensional cross sectional refractive index profile of the channel waveguide was reconstructed by considering the shape of the channel waveguide as well as the index distribution of the planar waveguide.
引用
收藏
页码:203 / 207
页数:5
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