InAlAs/pseudomorphic InGaAs/InP high electron mobility transistor with doped InAs/AlAs superlattice

被引：7

作者：

Kohara, T ^{[1
]}

Hoshino, K ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] DENSO CORP, Res Labs, Aichi 470111, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期

关键词：

doped InAs/AlAs superlattice (DIAS); carrier density degradation; fluorine; two-dimensionally grown superlattice; activation energy; Arrhenius plot; 300-450 degrees C annealing; 125 degrees C BT test;

D O I：

10.1143/JJAP.39.1683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a novel indium phosphide high electron mobility transistor (HEMT) which has prevented sheet carrier density degradation. The fabricated structure replaces n-In0.52Al0.48As with an n-InAs/n-AlAs superlattice (doped InAs/AlAs superlattice; DIAS), preventing carrier density degradation of the n-type doped carrier supply layer on HEMT. DIAS requires a two-dimensionally grown seven-period superlattice each period of which has two monolayers of InAs and two monolayers of AlAs. The fabricated HEMT exhibits improved prevention of sheet carrier density degradation compared with the conventional HEMT with an n-In0.52Al0.48As carrier supply layer in the case of 300-450 degrees C annealing and a 125 degrees C bias temperature (BT) rest.

引用

页码：1683 / 1686

页数：4