IDDQ-based diagnosis at very low voltage (VLV) for bridging defects

被引：2

作者：

Arumi, D. ^{[1
]}

Rodriguez-Montanes, R. ^{[1
]}

Figueras, J. ^{[1
]}

Eichenberger, S. ^{[1
]}

Hora, C. ^{[1
]}

Kruseman, B. ^{[1
]}

Lousberg, M. ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Dept Elect Engn, Barcelona 08028, Spain

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 05期

关键词：

D O I：

10.1049/el:20073573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bridging defects generate two currents related to the fault-free case: bridge current and downstream current. The latter may complicate the diagnosis of bridging defects. However, in CMOS technologies, the downstream current can be minimised at low power supply Woo) values, thus facilitating the diagnosis of such defects. Experimental evidence of this behaviour is presented.

引用

页码：273 / 274

页数：2

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