Growth and characterization of Cu(InAl)Se2 by vacuum evaporation

被引：42

作者：

Itoh, F ^{[1
]}

Saitoh, O ^{[1
]}

Kita, M ^{[1
]}

Nagamori, H ^{[1
]}

Oike, H ^{[1
]}

机构：

[1] Gunma Univ, Dept Elect Engn, Kiryu, Gumma 376, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

quaternary chalcopyrite compound; Cu(InAl)Se-2; vacuum evaporation;

D O I：

10.1016/S0927-0248(97)00132-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Quaternary chalcopyrite compounds Cu(In1-xAlx)Se-2 were prepared by vacuum evaporation method. It is found that the ratio of In/Al determines the nature of semiconducting properties from n-type in the region of In/Al less than or equal to 1 to p-type in the region of In/Al > 1.

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页码：119 / 125

页数：7

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