Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold

被引：0
|
作者：
Gordeev, NY [1 ]
Zaitsev, SV
Karachinsky, LY
Kopchatov, VI
Novikov, II
Ustinov, VM
Kop'ev, PS
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Nova Crystals Inc, San Jose, CA 95131 USA
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 01期
关键词：
D O I：
10.1134/1.1538549
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electroluminescence spectroscopy has been used in a wide range of temperatures (77-300 K) and driving current densities to study a laser heterostructure based on vertically coupled self-assembled InGaAs quantum dots (QD). It has been found that lasing occurs via the QD ground state in the entire temperature range. The temperature-independent position of the emission peak corresponding to the second excited state in QDs is explained. (C) 2003 MAIK "Nauka/Interperiodica".
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页码：112 / 114
页数：3
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