Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold

被引：0

作者：

Gordeev, NY ^{[1
]}

Zaitsev, SV

Karachinsky, LY

Kopchatov, VI

Novikov, II

Ustinov, VM

Kop'ev, PS

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Nova Crystals Inc, San Jose, CA 95131 USA

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 01期

关键词：

D O I：

10.1134/1.1538549

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electroluminescence spectroscopy has been used in a wide range of temperatures (77-300 K) and driving current densities to study a laser heterostructure based on vertically coupled self-assembled InGaAs quantum dots (QD). It has been found that lasing occurs via the QD ground state in the entire temperature range. The temperature-independent position of the emission peak corresponding to the second excited state in QDs is explained. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：112 / 114

页数：3

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