Magnetotunnelling and photoluminescence spectroscopy of self-assembled InAs quantum dots

被引：9

作者：

Itskevich, IE

Ihn, T

Thornton, A

Henini, M

Carmona, HD

Eaves, L

Main, PC

Maude, DK

Portal, JC

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[2] Inst Natl Sci Appl, CNRS, F-31077 Toulouse, France

[3] CNRS, LCMI, F-38042 Grenoble, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

self-assembled quantum dots; resonant tunnelling; high pressure;

D O I：

10.1143/JJAP.36.4073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled InAs quantum dots (QDs) in AlAs and GaAs matrices are investigated by tunnelling and optical spectroscopy. Tunnelling through an individual QD in the AlAs barrier of a n-i-n single-barrier device is used to probe the properties of both the emitter two-dimensional electron gas (2DEG) and the QD. The Landau fan of the 2DEG is mapped at magnetic field parallel to the tunnelling current, B parallel to I; as well as the spin splitting in the QD at B perpendicular to I. An electron g-factor in the QD is determined as \g\ = 1.2 +/- 0.5. In the photoluminescence spectrum of InAs QDs in B up to 23 T, a strong anisotropy in the diamagnetic shift is found. The spatial extent of the carrier wave function in the dot is estimated as 60 Angstrom. Under hydrostatic pressure up to 8 kbar, the pressure coefficient for the dot emission line is (9.1 +/- 0.2) meV/kbar: about 20% smaller than for the Gamma-point bandgap in bulk GaAs.

引用

页码：4073 / 4077

页数：5

共 20 条

[1]

Armistead C. J., 1985, Proceedings of the 17th International Conference on the Physics of Semiconductors, P1047

[2]

Bastard Gerald, 1988, Wave mechanics applied to semiconductor heterostructures

[3] InAs-GaAs quantum dots: From growth to lasers [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 194 (01) :159-173

[4]

Brunkov PN, 1996, SEMICONDUCTORS+, V30, P492

[5] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[6] QUANTUM-ENGINEERING OF III-V SEMICONDUCTOR STRUCTURES [J].

GOSSARD, AC ;

FAFARD, S .

SOLID STATE COMMUNICATIONS, 1994, 92 (1-2) :63-70

[7] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].

GRUNDMANN, M ;

STIER, O ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981

[8]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[9] Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots [J].

Heitz, R ;

Grundmann, M ;

Ledentsov, NN ;

Eckey, L ;

Veit, M ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 68 (03) :361-363

[10] Resonant magnetotunneling through individual self-assembled InAs quantum dots [J].

Itskevich, IE ;

Ihn, T ;

Thornton, A ;

Henini, M ;

Foster, TJ ;

Moriarty, P ;

Nogaret, A ;

Beton, PH ;

Eaves, L ;

Main, PC .

PHYSICAL REVIEW B, 1996, 54 (23) :16401-16404

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