InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

被引：0

作者：

Tsuchiya, T ^{[1
]}

Shimizu, J ^{[1
]}

Shirai, M ^{[1
]}

Aoki, M ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the case of InGaAlAs selective-area growth (SAG), when the aluminum content is high (Al: 0.48), flatness at the mask edge degrades and compositional change in the selective region increases. On the other hand, when the aluminum content is low (Al: 0.16), a flat growth plane is formed and no spike growth at the mask edge appears. Moreover, for a multiple-quantum-well structure, the PL peak intensity in the selective region is similar to that in the non-selective region.

引用

页码：546 / 549

页数：4

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