Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient

被引：0
|
作者：
Keiper, D [1 ]
Westphalen, R [1 ]
Landgren, G [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 12期
关键词：
TBA; TBP; alternative V-sources; OMVPE; MOCVD; nitrogen;
D O I：
10.1007/s11664-000-0125-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H-2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H-2 and N-2 is evaluated. Advantages with the TBA/TBP/N-2 process are discussed.
引用
收藏
页码：1398 / 1401
页数：4
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