Analysis of electron transport in surface-passivated nanocrystalline porous silicon

被引:1
作者
Koijma, A [1 ]
Koshida, N [1 ]
机构
[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期
关键词
nanocrystal silicon; porous silicon; time-of-flight measurement; ballistic transport; drift velocity;
D O I
10.1143/JJAP.42.2395
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electron transport mechanism in a quantum-sized silicon, system has been studied for a structure- and surface-controlled nanocrystalline porous silicon (nc-PS) sample by a time-of-flight (TOF) measurement using a picosecond UV laser pulse. From observed characteristic TOF signals, we have obtained the drift velocity. of the electrons in nc-PS as a function of the electric field. Unlike in single-crystalline silicon (c-Si), the drift velocity in nc-PS shows no apparent saturation with increasing field strength. It reaches 2.2 x 10(8) cm/s at room temperature at an electric field of 29.1 kV/cm. This drift velocity is 22 times as large as that in c-Si. To obtain such a high drift velocity, the electrons should be accelerated ballistically over 1.6 mum. It appears that the probability of scattering to cause a large change of the electron momentum vector is significantly reduced in nc-PS. These results support the model that electrons can travel ballistically via a multiple-tunneling cascade through the interfacial barriers between interconnected silicon nanocrystallites.
引用
收藏
页码:2395 / 2398
页数:4
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