Effect of annealing on the microstructural and optical properties of InAs quantum dots grown on GaAs buffer layers

被引：0

作者：

Lee, KH ^{[1
]}

Lee, HS

Lee, JY

Lee, DU

Kim, TW

Kim, MD

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

[3] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷

关键词：

rapid thermal annealing; quantum dots; indium arsenide; transmission electron microscopy; photoluminescence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of thermal annealing on self-assembled InAs/GaAs quantum dots (QDs) has been investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral size and density of the InAs QDs were not changed significantly up to 700 degreesC. When the InAs/GaAs QDs were annealed at 750 degreesC, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared due to annealing at 850 degreesC. PL spectra showed that peaks corresponding to the interband transitions of the InAs QDs shifted slightly towards the high-energy side and that the full width at half maximum of the peak decreased with an increase in annealing temperature. The behavior of the PL peak was attributed to interdiffusion between the InAs QDs and the GaAs capping layer. These results can help to give an improved understanding of the effect of thermal annealing on the microstructural and optical properties of InAs/GaAs QDs.

引用

页码：S799 / S802

页数：4

共 11 条

[1] Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots [J].

Babinski, A ;

Jasinski, J .

THIN SOLID FILMS, 2002, 412 (1-2) :84-88

[2] Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap [J].

Babinski, A ;

Jasinski, J ;

Bozek, R ;

Szepielow, A ;

Baranowski, JM .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2576-2578

[3] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[4] Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing [J].

Hsu, TM ;

Lan, YS ;

Chang, WH ;

Yeh, NT ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 76 (06) :691-693

[5]

Kang SK, 2003, J KOREAN PHYS SOC, V42, P418

[6]

Lee SJ, 2003, J KOREAN PHYS SOC, V42, P825

[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] Tuning self-assembled InAs quantum dots by rapid thermal annealing [J].

Malik, S ;

Roberts, C ;

Murray, R ;

Pate, M .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :1987-1989

[10] Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots [J].

Xu, SJ ;

Wang, XC ;

Chua, SJ ;

Wang, CH ;

Fan, WJ ;

Jiang, J ;

Xie, XG .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3335-3337

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