Fabrication and electrical characteristics of ultrathin (HfO2)x(SiO2)1-x films by surface sol-gel method and reaction-anneal treatment

被引：5
作者：
Gong, You-Pin [1 ]
Li, Ai-Dong [1 ]
Zhao, Chao [1 ]
Xia, Yi-Dong [1 ]
Wu, Di [1 ]
机构：
[1] Nanjing Univ, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 09期
关键词：
High-k dielectrics; (HfO2)(x)(SiO2)(1-x); Surface sol-gel; Reaction-anneal; THERMAL-STABILITY; THIN-FILMS; HFO2; DIELECTRICS;
D O I：
10.1016/j.mee.2009.10.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hafnium oxide (HfO2) films were deposited on Si substrates with a pre-grown oxide layer using hafnium chloride (HfCl4) source by surface sol-gel process, then ultrathin (HfO2)(x)(SiO2)(1-x) films were fabricated due to the reaction of SiO2 layer with HfO2 under the appropriate reaction-anneal treatment. The observation of high-resolution transmission electron microscopy indicates that the ultrathin films show amorphous nature. X-ray photoelectron spectroscopy analyses reveal that surface sol-gel derived ultrathin films are Hf-Si-O alloy instead of HfO2 and pre-grown SiO2 layer, and the composition was Hf0.52Si0.48O2 under 500 degrees C reaction-anneal. The lowest equivalent oxide thickness (EOT) value of 0.9 nm of film annealed at 500 degrees C has been obtained with small flatband voltage of -0.31 V. The experimental results indicate that a simple and feasible solution route to fabricate (HfO2)(x)(SiO2)(1-x) composite films has been developed by means of combination of surface sol-gel and reaction-anneal treatment. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1756 / 1759
页数：4
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