Electronic structure of nanostructured ZnO from x-ray absorption and emission spectroscopy and the local density approximation

被引:196
作者
Dong, CL
Persson, C
Vayssieres, L
Augustsson, A
Schmitt, T
Mattesini, M
Ahuja, R
Chang, CL
Guo, JH
机构
[1] Tamkang Univ, Dept Phys, Tamsui, Taiwan
[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
[3] Natl Inst Mat Sci, ICYS, Tsukuba, Ibaraki 3050044, Japan
[4] Uppsala Univ, Dept Phys, S-75122 Uppsala, Sweden
关键词
D O I
10.1103/PhysRevB.70.195325
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
O 1s absorption spectroscopy (XAS) and O Kalpha emission spectroscopy (XES) were performed to study the electronic structure of nanostructured ZnO. The band gap is determined by the combined absorption-emission spectrum. Resonantly excited XES spectra showing an energy dependence in the spectral shape reveal the selected excitations to the different Zn 3d, 4s, and 4p states in hybridization with O 2p states. The partial density of state obtained from local density approximation (LDA) and LDA+U calculations are compared with the experimental results. The LDA+U approach is suitable to correct LDA self-interaction error of the cation d states. The atomic eigenstates of 3d in zinc and 2p in oxygen are energetically close, which induces the strong interaction between Zn 3d and O 2p states. This anomalous valence band cation-d-anion-p hybridization is verified by taking into account the strong localization of the Zn 3d states.
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页码:1 / 5
页数:5
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