Short-cavity, edge-emitting lasers with high-reflectance, dielectric mirrors

被引：3

作者：

Fitz, JL ^{[1
]}

Horst, SC ^{[1
]}

Hinkel, DS ^{[1
]}

Turk, H ^{[1
]}

机构：

[1] Dept Def, Ft George G Meade, MD 20755 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1311322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication and characterization of short-cavity, edge-emitting lasers operating at 861 nm is reported. These lasers were fabricated with high-reflectance, dielectric mirrors formed by plasma-enhanced, chemical-vapor deposition. Lasers with cavity lengths of 64 and 32 mu m had continuous-wave, room-temperature threshold currents of 4.0 and 2.9 mA, respectively. To determine the reflectance of the deposited dielectric mirrors, a simple relationship was derived that used the change in the laser threshold current density resulting from mirror deposition. [S0003-6951(00)02738-8].

引用

页码：1756 / 1758

页数：3

共 8 条

[1]

HAYT WH, 1974, ENG ELECTROMAGNETICS, pCH12

[2] Edge-emitting GaInAs-AlGaAs microlasers [J].