Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method

被引：15

作者：

Stenzenberger, J ^{[1
]}

Bünger, T ^{[1
]}

Börner, F ^{[1
]}

Eichler, S ^{[1
]}

Flade, T ^{[1
]}

Hammer, R ^{[1
]}

Jurisch, M ^{[1
]}

Kretzer, U ^{[1
]}

Teichert, S ^{[1
]}

Weinert, B ^{[1
]}

机构：

[1] Freiberger Compound Mat GMBH, D-09599 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 1-2期

关键词：

substrates; gradient freeze tecbnique; semi-insulating gallium arsenide;

D O I：

10.1016/S0022-0248(02)02214-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It has been demonstrated that 200 mm diameter semi-insulating (SI) GaAs single crystals can be grown by an upscaled proprietary VGF method successfully used for commercial crystal growth up to 150 mm in the past. First results of structural and electrical characterization of wafers made from these crystals will be presented. They are similar to those known for state-of-the-art 150 mm SI GaAs VGF/VB crystals. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 61

页数：5

共 11 条

[1]

BOHM J, 1988, KRISTALLZUCHTUNG, P597

[2] Development of a vertical gradient freeze process for low EPD GaAs substrates [J].

Bünger, T ;

Behr, D ;

Eichler, S ;

Flade, T ;

Fliegel, W ;

Jurisch, M ;

Kleinwechter, A ;

Kretzer, U ;

Steinegger, T ;

Weinert, B .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :5-9

[3] Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques [J].

Geiler, HD ;

Karge, H ;

Wagner, A ;

Ehlert, A ;

Daub, E ;

Messmann, K .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 :46-50

[4] ADVANCED ARSENIC PURIFICATION AND GAAS SYNTHESIS FOR IMPROVED REPRODUCIBLE GROWTH OF UNDOPED SEMIINSULATING GAAS [J].

IMMENROTH, H ;

LAMBERT, U ;

TOMZIG, E .

JOURNAL OF CRYSTAL GROWTH, 1994, 142 (1-2) :37-48

[5] Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:: a thermochemical approach [J].

Korb, J ;

Flade, T ;

Jurisch, M ;

Köhler, A ;

Reinhold, T ;

Weinert, B .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :343-348

[6] The preparation of large single crystals [J].

Ramsperger, HC .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1927, 15 (06) :359-363

[7] 200 mm GaAs crystal growth by the temperature gradient controlled LEC method [J].

Seidl, A ;

Eichler, S ;

Flade, T ;

Jurisch, M ;

Köhler, A ;

Kretzer, U ;

Weinert, B .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :561-565

[8]

SONNENBERG K, 1997, 3 5S REV, V10, P30

[9]

SONNENBERG K, Patent No. 0002349

[10] CONTACTLESS EVALUATION OF SEMIINSULATING GAAS WAFER RESISTIVITY USING THE TIME-DEPENDENT CHARGE MEASUREMENT [J].

STIBAL, R ;

WINDSCHEIF, J ;

JANTZ, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10) :995-1001

← 1 2 →