GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

被引：8
|
作者：
Chusovitin, E. A. [1 ]
Goroshko, D. L. [1 ,2 ]
Dotsenko, S. A. [1 ,2 ]
Chusovitina, S. V. [1 ]
Shevlyagin, A. V. [1 ]
Galkin, N. G. [1 ,2 ]
Gutakovskii, A. K. [3 ,4 ]
机构：
[1] Inst Automat & Control Proc FEB RAS, 5 Radio St, Vladivostok 690041, Russia
[2] Far Eastern Fed Univ, Sch Nat Sci, 8 Sukhanova St, Vladivostok 690950, Russia
[3] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentieva Ave, Novosibirsk 630090, Russia
[4] Novosibirsk State Univ, 2 Pirogova St, Novosibirsk 630090, Russia
来源：
SCRIPTA MATERIALIA | 2017年 / 136卷
基金：
俄罗斯基础研究基金会;
关键词：
Nanocrystalline materials; Crystal structure; Heteroepitaxy; Transmission electron microscopy; GaSb; TRANSMISSION ELECTRON-MICROSCOPY; SI; 001; SUBSTRATE; MORPHOLOGY; SURFACES; ISLANDS; SI(100); LAYERS; STAGE;
D O I：
10.1016/j.scriptamat.2017.04.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200-500 degrees C. The embedded NCs have a concentration of about 5.4 x 10(10) cm(-2), a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)parallel to Si(111), GaSb[1 (1) over bar0]parallel to Si[1 (1) over bar0]. (C) 2017 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
引用
收藏
页码：83 / 86
页数：4
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