GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

被引：8

作者：

Chusovitin, E. A. ^{[1
]}

Goroshko, D. L. ^{[1
,2
]}

Dotsenko, S. A. ^{[1
,2
]}

Chusovitina, S. V. ^{[1
]}

Shevlyagin, A. V. ^{[1
]}

Galkin, N. G. ^{[1
,2
]}

Gutakovskii, A. K. ^{[3
,4
]}

机构：

[1] Inst Automat & Control Proc FEB RAS, 5 Radio St, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Sch Nat Sci, 8 Sukhanova St, Vladivostok 690950, Russia

[3] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentieva Ave, Novosibirsk 630090, Russia

[4] Novosibirsk State Univ, 2 Pirogova St, Novosibirsk 630090, Russia

来源：

SCRIPTA MATERIALIA | 2017年 / 136卷

基金：

俄罗斯基础研究基金会;

关键词：

Nanocrystalline materials; Crystal structure; Heteroepitaxy; Transmission electron microscopy; GaSb; TRANSMISSION ELECTRON-MICROSCOPY; SI; 001; SUBSTRATE; MORPHOLOGY; SURFACES; ISLANDS; SI(100); LAYERS; STAGE;

D O I：

10.1016/j.scriptamat.2017.04.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200-500 degrees C. The embedded NCs have a concentration of about 5.4 x 10(10) cm(-2), a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)parallel to Si(111), GaSb[1 (1) over bar0]parallel to Si[1 (1) over bar0]. (C) 2017 Published by Elsevier Ltd on behalf of Acta Materialia Inc.

引用

页码：83 / 86

页数：4

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