Strains in InAs quantum dots embedded in GaAs: A finite element study

被引：18
作者：
Muralidharan, G [1 ]
机构：
[1] Inst Microelect, Singapore 117685, Singapore
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 7A期
关键词：
InAs; GaAs; axi-symmetric model; quantum dots; finite element method; strains;
D O I：
10.1143/JJAP.39.L658
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strains in InAs quantum dots embedded in GaAs have been examined using a 2-D axi-symmetric finite element method within a thermo-mechanical framework. The initial shape of the dot was assumed to be conical in 3-D. Results show that the shape and the width/height ratio are critical in determining the strains within the quantum dots. Results of the calculation are compared with the results of other calculations and experimental measurements of strains using the scanning tunneling microscope (STM).
引用
收藏
页码：L658 / L660
页数：3
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