Selective area growth of InAs quantum dots formed on a patterned GaAs substrate

被引：44

作者：

Birudavolu, S ^{[1
]}

Nuntawong, N ^{[1
]}

Balakrishnan, G ^{[1
]}

Xin, YC ^{[1
]}

Huang, S ^{[1
]}

Lee, SC ^{[1
]}

Brueck, SRJ ^{[1
]}

Hains, CP ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.1792792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the growth and characterization of InAs quantum dots (QDs) on a patterned GaAs substrate using metalorganic chemical vapor deposition. The QDs nucleate on the (001) plane atop GaAs truncated pyramids formed by a thin patterned SiO2 mask. The base diameter of the resulting QDs varies from 30 to 40 nm depending on the size of the mask. With specific growth conditions, we are able to form highly crystalline surface QDs that emit at 1.6 mum under room-temperature photopumped conditions. The crystalline uniformity and residual strain is quantified in high-resolution transmission electron microscopy images and high-resolution x-ray reciprocal space mapping. These strained QDs may serve as a template for selective nucleation of a stacked QD active region. (C) 2004 American Institute of Physics.

引用

页码：2337 / 2339

页数：3

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