Characterization of Dielectric Substrates Using Dual Band Microwave Sensor

被引：49

作者：

Armghan, Ammar ^{[1
]}

Alanazi, Turki M. ^{[1
]}

Altaf, Ahsan ^{[2
]}

Haq, Tanveerul ^{[2
]}

机构：

[1] Jouf Univ, Dept Elect Engn, Coll Engn, Sakakah 72345, Saudi Arabia

[2] INZA Res Lab Electromagnet & Microwave Engn, Multan 60600, Pakistan

来源：

IEEE ACCESS | 2021年 / 9卷

关键词：

Complementary symmetric split-ring resonator; dual band; microwave sensor; permittivity; high Q resonator; material under test; SENSITIVITY; PAIRS;

D O I：

10.1109/ACCESS.2021.3075246

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, a compact, inexpensive, and efficient dual band microwave sensor is proposed. The sensor is based on two Complementary Symmetric Split-Ring Resonators (CSSRRs) and possesses a high Q factor and wide sensing range. These CSSRRs are coupled electrically with two inductive patches to the Microstrip Transmission Line (MTL). This combination provides two dual bands, first at 5.35 GHz with a notch depth of -55.20 dB and second at 7.99 GHz with a notch depth of -22.54 dB. The sensor works in transmission mode and senses shift in frequency. Some commonly available dielectric substrates with relative permittivity ranges between 1 and 12 are considered Material Under Test (MUT), and detailed sensitivity analysis is being performed for each band. The dual band sensor is fabricated on a low-cost, widely available FR4 substrate and measured by CEYEAR AV3672D vector network analyzer. Additionally, the least square curve fitting method is used to develop a mathematical model for the measured results. An excellent agreement is observed between simulated, measured, and formulated results.

引用

页码：62779 / 62787

页数：9

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