Defects in carbon nanotubes

被引:572
作者
Charlier, JC [1 ]
机构
[1] Univ Catholique Louvain, Unit Phys Chem & Phys Mat, Res Ctr Microscop & Nanascop Mat & Elect Devices, CERMIN, B-1348 Louvain, Belgium
关键词
D O I
10.1021/ar010166k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Carbon nanotubes are quasi one-dimensional nanostructures with unique eletrical prroperties that make them prime candidates for molecular electronics, which is certainly a most promising direction in nanotechnology. Early theoretical works predicted that the electronic properties of "ideal" carbon nanotubes depend on their diameter and chirality. However, carbon nanotubes are probably not as perfect as they were once thought to be. Defects such as pentagons, heptagons, vacancies, or dopant are found to modify drastically the electronic properties of these nanosystems. Irradiation processes can lead to interesting, highly defective nanostructures and also to the coalescence of nanotubes within a rope. The introduction of defects in the carbon network is thus an interesting way to tailor its intrinsic properties, to create new potential nanodevices. The aim of the present Acount is to investigate theoretically the effects of different types of defects on the electronic properties of carbon nanotubes, and to propose new potential applications in nanoelectronics.
引用
收藏
页码:1063 / 1069
页数:7
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