High-T-c transistors

被引：162
作者：
Mannhart, J
机构：
[1] IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1996年 / 9卷 / 02期
关键词：
ELECTROSTATIC CHARGE MODULATION; HIGH-TEMPERATURE SUPERCONDUCTOR; EXTERNAL ELECTRIC-FIELD; MICROWAVE SURFACE IMPEDANCE; YBA2CU3O7-DELTA THIN-FILMS; STATIC DIELECTRIC-CONSTANT; QUASI-PARTICLE SCATTERING; VORTEX FLOW TRANSISTOR; THERMAL-CONDUCTIVITY; JOSEPHSON JUNCTION;
D O I：
10.1088/0953-2048/9/2/001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An overview is provided of the state of the art for transistor-like three-terminal devices based on high-T-c superconductors. Superconducting base transistors, dielectric base transistors, vortex flow transistors, electric field-effect devices and quasiparticle-injection devices are reviewed and their fundamental limitations discussed.
引用
收藏
页码：49 / 67
页数：19
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