Growth of Si nanocrystals on alumina and integration in memory devices

被引：55

作者：

Baron, T

Fernandes, A

Damlencourt, JF

De Salvo, B

Martin, F

Mazen, F

Haukka, S

机构：

[1] CEA Grenoble, CNRS, UMR 5129, Lab Technol Microelect,Leti,DTS, F-38054 Grenoble, France

[2] CEA, Leti, Dept Technol Silicium, F-38054 Grenoble, France

[3] Inst Natl Sci Appl, Phys Mat Lab, CNRS, F-69621 Villeurbanne, France

[4] ASM Microchem Ltd, FIN-02631 Espoo, Finland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 23期

关键词：

D O I：

10.1063/1.1577409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 10(12) cm(-2), for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics. (C) 2003 American Institute of Physics.

引用

收藏

页码：4151 / 4153

页数：3

相关论文

共 16 条

[1] Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices [J].

Baron, T ;

Martin, F ;

Mur, P ;

Wyon, C ;

Dupuy, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) :1004-1008

[2] 80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications [J].

Buchanan, DA ;

Gusev, EP ;

Cartier, E ;

Okorn-Schmidt, H ;

Rim, K ;

Gribelyuk, MA ;

Mocuta, A ;

Ajmera, A ;

Copel, M ;

Guha, S ;

Bojarczuk, N ;

Callegari, A ;

D'Emic, C ;

Kozlowski, P ;

Chan, K ;

Fleming, RJ ;

Jamison, PC ;

Brown, J ;

Arndt, R .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :223-226

[3] Robustness of ultrathin aluminum oxide dielectrics on Si(001) [J].

Copel, M ;

Cartier, E ;

Gusev, EP ;

Guha, S ;

Bojarczuk, N ;

Poppeller, M .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2670-2672

[4] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY OF ISOLATED HYDROXYL-GROUPS ON ALPHA-AL2O3(0001) [J].

COUSTET, V ;

JUPILLE, J .

SURFACE SCIENCE, 1994, 307 (1 -3 pt B) :1161-1165

[5] Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices [J].

De Salvo, B ;

Ghibaudo, G ;

Pananakakis, G ;

Masson, P ;

Baron, T ;

Buffet, N ;

Fernandes, A ;

Guillaumot, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1789-1799

[6]

FERNANDES A, P ESSDERC 2001

[7] MONOSILANE ADSORPTION ON POROUS ALUMINA [J].

IMAI, H ;

WATANABE, T ;

SUZUKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) :3202-3204

[8] Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics [J].

Kim, I ;

Han, S ;

Kim, H ;

Lee, J ;

Choi, B ;

Hwang, S ;

Ahn, D ;

Shin, H .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :111-114

[9]

MADHUKAR S, 2001, MAT RES SOC S P, V638

[10] Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition [J].

Miyazaki, S ;

Hamamoto, Y ;

Yoshida, E ;

Ikeda, M ;

Hirose, M .

THIN SOLID FILMS, 2000, 369 (1-2) :55-59