Impact of Channel Implant Variation on RTN and Flicker Noise

被引：3

作者：

Raffel, Yannick ^{[1
]}

Seidel, Konrad ^{[1
]}

Pirro, Luca ^{[2
]}

Lehmann, Steffen ^{[2
]}

Hoffmann, Raik ^{[1
]}

Olivo, Ricardo ^{[1
]}

Kaempfe, Thomas ^{[1
]}

Heitmann, Johannes ^{[3
]}

机构：

[1] Fraunhofer IPMS, Fraunhofer CNT, Dresden, Germany

[2] GLOBALFOUNDRIES, GLOBALFOUNDRIES Dresden, Dresden, Germany

[3] Tech Univ Bergakad Freiberg, Freiberg, Germany

来源：

2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2020年

关键词：

Flicker-noise; RTN; FDSOI; doping-density; MOSFET;

D O I：

10.1109/EUROSOI-ULIS49407.2020.9365296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With different device doping options in fully depleted silicon-on-insulator (FDSOI) metaloxide semiconductor field effect transistor (MOSFET) channel and under different bias conditions the low frequency noise level can be manipulated and optimized We demonstrated a noise level dependence on different channel device doping options and a lowering of gate input voltage (SVG) with different back gate voltages (Vb) in n-type metal-oxide semiconductor (NMOS) and p-type metal-oxide semiconductor (PMOS) structures.

引用

页数：4