Structural and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films grown on Ir/MgO buffered Si(100) substrates

Thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 degrees C were studied. The results show that the film prepared at 650 degrees C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 mu C/cm(2) stop and 100 kV/cm under an electric field of 480 kV/cm, respectively.