Characterization of uncooled poly SiGe microbolometer for infrared detection

被引：0
作者：
Dong, L [1 ]
Yue, RF [1 ]
Liu, LT [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An uncooled poly SiGe microbolometer for infrared detection has been fabricated and characterized. The poly SiGe thin film is deposited by ultrahigh vacuum chemical vapour deposition (UHVCVD) system and its structural properties are characterized by Rutherford backscattering spectrometry (RBS) and Raman. The dependences of the temperature coefficient of resistance on operation temperature and on annealing temperature have been investigated. A leg-supported microbridge is used to decrease the thermal conductance of microbolometer with the silicon micromachining technique. The results show that at a chopping frequency of 15 Hz and a bias voltage of 5 V, the maximum detectivity of 8.3 X 10(8) cm Hz(1/2)/W is achieved with a thermal response time of 16.6 ms.
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页码：770 / 773
页数：4
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