Zero-bias conductance through side-coupled double quantum dots

被引:0
作者
Bonca, J. [1 ]
Zitko, R. [2 ]
机构
[1] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
[2] J Stefan Inst, SI-1000 Ljubljana, Slovenia
来源
ELECTRON CORRELATION IN NEW MATERIALS AND NANOSYSTEMS | 2007年 / 241卷
关键词
quantum dots; kondo effect; two-stage kondo effect; fano resonance;
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point localized electrons form a spin-singlet associated with weak conductance. For weak inter-dot coupling we find enhanced conductance due to the two-stage Kondo effect when two electrons occupy quantum dots. When quantum dots are populated with a single electron, the system enters the Kondo regime with enhanced conductance. Analytical expressions for the width of the Kondo regime and the Kondo temperature in this regime are given.
引用
收藏
页码:371 / +
页数:3
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