The activation of Mg in GaN by annealing with minority-carrier injection

被引：59

作者：

Miyachi, M ^{[1
]}

Tanaka, T ^{[1
]}

Kimura, Y ^{[1
]}

Ota, H ^{[1
]}

机构：

[1] Pioneer Elect Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 350, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 degrees C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. (C) 1998 American Institute of Physics.

引用

页码：1101 / 1103

页数：3

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