High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature

被引：18

作者：

Yu, Wen ^{[1
,2
]}

Han, Dedong ^{[2
]}

Cui, Guodong ^{[2
]}

Cong, Yingying ^{[2
]}

Dong, Junchen ^{[2
]}

Zhang, Xiaomi ^{[2
]}

Zhang, Xing ^{[2
]}

Wang, Yi ^{[2
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ZNO TFTS; GATE; SEMICONDUCTORS; STABILITY; VOLTAGE;

D O I：

10.7567/JJAP.55.04EK05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance calcium-doped zinc oxide thin-film transistors (Ca-ZnO TFTs) have been successfully fabricated on transparent glass at low temperature by RF magnetron sputtering. To study the effects of calcium doping on zinc oxide thin-film transistors, the characteristics of Ca-ZnO TFTs and ZnO TFTs are compared and analyzed in detail from different perspectives, including electrical performance, surface morphology, and crystal structure of the material. The results suggest that the incorporation of calcium element can decrease the root-mean-square roughness of the material, suppress growth of a columnar structure, and improve device performance. The TFTs with Ca-ZnO active layer exhibit excellent electrical properties with the saturation mobility (mu(sat)) of 147.1 cm(2)V(-1)s(-1), threshold voltage (V-t) of 2.91V, subthreshold slope (SS) of 0.271V/dec, and I-on/I-off ratio of 2.34 x 108. In addition, we also study the uniformity of the devices. The experimental results show that the Ca-ZnO TFTs possess good uniformity, which is important for large-area application. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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