Modal analysis of large spot size, low output beam divergence quantum-dot lasers

被引:8
作者
Corbett, Brian [1 ]
Lambkin, Paul
O'Callaghan, James
Deubert, Stefan
Kaiser, Wolfgang
Reithmaier, Johann Peter
Forchel, Alfred
机构
[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
[3] Univ Kassel, Inst Nanostruct Technol & Analyt, D-34109 Kassel, Germany
关键词
large optical cavity (LOC); low divergence; quantum-dot (QD) lasers;
D O I
10.1109/LPT.2007.897569
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Large spot size ridge waveguide lasers utilizing a low modal gain single quantum dot layer emitting at 925 nm were designed and fabricated. Ridge waveguides with width < 3 mu m emit in a single transverse mode with a low transverse full-width at half-maximum divergence of 20 degrees. Wider ridges initially lase in the first-order transverse mode before collapsing to the fundamental mode. This characteristic is explained by a thermally induced increase in the refractive index of the waveguide core. All lasers operate in a single lateral mode.
引用
收藏
页码:916 / 918
页数:3
相关论文
共 9 条
[1]   Temperature mapping and thermal lensing in large-mode, high-power laser diodes [J].
Chan, P. K. L. ;
Pipe, K. P. ;
Plant, J. J. ;
Swint, R. B. ;
Juodawlkis, P. W. .
APPLIED PHYSICS LETTERS, 2006, 89 (20)
[2]   1.3 μm room-temperature GaAs-based quantum-dot laser [J].
Huffaker, DL ;
Park, G ;
Zou, Z ;
Shchekin, OB ;
Deppe, DG .
APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566
[3]   LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].
KIRSTAEDTER, N ;
LEDENTSOV, NN ;
GRUNDMANN, M ;
BIMBERG, D ;
USTINOV, VM ;
RUVIMOV, SS ;
MAXIMOV, MV ;
KOPEV, PS ;
ALFEROV, ZI ;
RICHTER, U ;
WERNER, P ;
GOSELE, U ;
HEYDENREICH, J .
ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417
[4]   Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers [J].
Klopf, F ;
Deubert, S ;
Reithmaier, JP ;
Forchel, A .
APPLIED PHYSICS LETTERS, 2002, 81 (02) :217-219
[5]   Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well [J].
Liu, GT ;
Stintz, A ;
Li, H ;
Malloy, KJ ;
Lester, LF .
ELECTRONICS LETTERS, 1999, 35 (14) :1163-1165
[6]   Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm [J].
Muszalski, J ;
Houlihan, J ;
Huyet, G ;
Corbett, B .
ELECTRONICS LETTERS, 2004, 40 (07) :428-430
[7]   The single-mode condition for semiconductor rib waveguides with large cross section [J].
Pogossian, SP ;
Vescan, L ;
Vonsovici, A .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1998, 16 (10) :1851-1853
[8]   High-performance GaInAs GaAs quantum-dot lasers based on a single active layer [J].
Schäfer, F ;
Reithmaier, JP ;
Forchel, A .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :2915-2917
[9]   High-power 980 nm quantum dot broad area lasers [J].
Sumpf, B ;
Deubert, S ;
Erbert, G ;
Fricke, J ;
Reithmaier, JP ;
Forchel, A ;
Staske, R ;
Tränkle, G .
ELECTRONICS LETTERS, 2003, 39 (23) :1655-1657