Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

被引：80

作者：

Sasaki, T. ^{[1
]}

Oikawa, T. ^{[1
]}

Suzuki, T. ^{[2
]}

Shiraishi, M. ^{[3
]}

Suzuki, Y. ^{[3
]}

Noguchi, K. ^{[1
]}

机构：

[1] TDK Corp, SQ Res Ctr, Nagano 3858555, Japan

[2] Akita Res Inst Adv Technol, AIT, Akita 0101623, Japan

[3] Osaka Univ, Grad Sch Engn, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

electron spin polarisation; elemental semiconductors; magnetic tunnelling; magnetoelectronics; magnetoresistance; phosphorus; silicon; spin dynamics;

D O I：

10.1063/1.3367748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hanle-type spin precession method was carried out in association with nonlocal (NL) magnetoresistance measurement using a highly doped (5x10(19) cm(-3)) silicon (Si) channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that of the gap dependence of NL signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major factor of temperature dependence of NL signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

引用

页数：3

共 17 条

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].