High-power 2.3-μm GaSb-based linear laser array

被引：32
作者：
Shterengas, L [1 ]
Belenky, GL
Gourevitch, A
Donetsky, D
Kim, JG
Martinelli, RU
Westerfeld, D
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11974 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
[3] Power Photon Corp, Stony Brook, NY 11794 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 10期
关键词：
optical pumping; power lasers; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;
D O I：
10.1109/LPT.2004.833920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power 2.3-mum In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-mum-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 mus/300 Hz) at a heatsink temperature of 18 degreesC. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.
引用
收藏
页码：2218 / 2220
页数：3
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