CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

被引：111

作者：

Zheng, J ^{[1
]}

Hahm, YC ^{[1
]}

Tripathi, VK ^{[1
]}

Weisshaar, A ^{[1
]}

机构：

[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 09期

关键词：

coplanar strip line; equivalent circuit; interconnects; microstrip line; on-chip interconnects; silicon substrate; skin effect; spectral domain approach; SPICE model;

D O I：

10.1109/22.868993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new comprehensive CAD-oriented modeling methodology for single and coupled interconnects on an Si-SiO2 substrate is presented. The modeling technique uses a modified quasi-static spectral domain electromagnetic analysis which takes into account the skin effect in the semiconducting substrate, equivalent-circuit models with only ideal lumped elements, representing the broadband characteristics of the interconnects, are extracted. The response of the proposed SPICE compatible equivalent-circuit models is shown to be in good agreement with the frequency-dependent transmission line characteristics of single and general coupled on-chip interconnects.

引用

页码：1443 / 1451

页数：9

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