Effect of Sb on transport properties of thin films of a-Ga20Se80-xSbx

Temperature dependence (148-318K) of dark conductivity and transient photoconductivity of thin films of a-Ga20Se80-xSbx (where x = 0, 5, 10, 15 and 20) is reported. It has been found that at temperatures (287-318 K), the conduction is taking place in the band tails of localized states, while at temperatures (148-287 K), the conduction is due to variable range hopping which shows fair agreement with Mott's condition of variable range hopping. The transient photoconductivity observations made at different temperatures indicate non-exponential decay and recombination may be considered to take place through valence and conduction band.