In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime

被引：32

作者：

Cattarin, S ^{[1
]}

Chazalviel, JN

Da Fonseca, C

Ozanam, F

Peter, LM

Schlichthorl, G

Stumper, J

机构：

[1] CNR, Ist Polarog & Elettrochim Preparat, I-35100 Padua, Italy

[2] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France

[3] Univ Bath, Sch Chem, Bath BA2 7AY, Avon, England

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 02期

关键词：

D O I：

10.1149/1.1838292

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.

引用

页码：498 / 502

页数：5

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