A 220 GHz metamorphic HEMT amplifier MMIC

被引：8

作者：

Tessmann, A ^{[1
]}

Leuther, A ^{[1
]}

Massier, H ^{[1
]}

Kuri, M ^{[1
]}

Schwoerer, C ^{[1
]}

Schlechtweg, M ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, IAF, D-79108 Freiburg, Germany

来源：

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年

关键词：

G-band; metamorphic high electron mobility transistor; (MHEMT); MMIC; cascode; millimeter-wave amplifier; coplanar waveguide;

D O I：

10.1109/CSICS.2004.1392573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the development of two 220 GHz low-noise amplifier (LNA) MMIC's for use in high-resolution active and passive millimeter-wave imaging systems. The amplifier circuits have been realized using a 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and cascode transistors, thus leading to a compact chip-size and excellent gain performance. The realized single-stage cascode LNA exhibited a small-signal gain of 5 dB at 220 GHz and a maximum gain of 7 dB at 215 GHz with an over-all chip-size of 1 x 1 mm(2). The four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz while covering a chip area of 1 x 2.5 mm(2).

引用

页码：297 / 300

页数：4

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