Growth of thin Bi films on W(110)

被引：13

作者：

Koitzsch, C ^{[1
]}

Bovet, M ^{[1
]}

Clerc, F ^{[1
]}

Naumovic, D ^{[1
]}

Schlapbach, L ^{[1
]}

Aebi, P ^{[1
]}

机构：

[1] Univ Fribourg, Dept Phys, CH-1700 Fribourg, Switzerland

来源：

SURFACE SCIENCE | 2003年 / 527卷 / 1-3期

关键词：

low energy electron diffraction (LEED); photoclectron diffraction measurement; growth; tungsten; bismuth;

D O I：

10.1016/S0039-6028(02)02534-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the growth of single crystalline epitaxial Bi films on W(110). X-ray photoelectron diffraction (XPD) and low energy electron diffraction (LEED) reveal that Bi grows well ordered in the pseudocubic (001) orientation. The two-fold symmetric W(110) surface supports four different Bi(001) domains. The multi-domain nature is unambigously detected via LEED showing a peculiar splitting of spots. It is shown that a preferential domain alignment along the [001](tungsten)-direction accounts for this observation and is in agreement with a two-fold XPD pattern. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：51 / 56

页数：6

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