Electron and hole g factors measured by spin-flip Raman scattering in CdTe/Cd1-xMgxTe single quantum wells

被引：152

作者：

Sirenko, AA ^{[1
]}

Ruf, T ^{[1
]}

Cardona, M ^{[1
]}

Yakovlev, DR ^{[1
]}

Ossau, W ^{[1
]}

Waag, A ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.56.2114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report resonant spin-flip Raman scattering measurements in CdTe/Cd1-xMgxTe single quantum wells with x=0.15, 0.26, and 0.5 as well as in Cd1-xMgxTe alloys with x=0, 0.15, and 0.5. Effective g factors of electrons and heavy holes are measured as a function of the quantum well width (18-100 Angstrom) and the angle of the magnetic field with respect to the growth axis. The electron g factors in quantum wells are between the values for bulk CdTe (g(e)=-1.644+/-0.005) and Cd0.85Mg0.15Te (g(e)=-0.802+/-0.005). We show that the change in the energy gap induced by the quantum confinement of the carriers provides the dominant contribution to the electron g factor in quantum wells. A large g factor anisotropy for conduction electrons is observed. It is shown that this anisotropy depends on the splitting between light-and heavy-hole states. The experimentally determined g factors are in good agreement with theoretical predictions.

引用

页码：2114 / 2119

页数：6

共 30 条

[1] RELATIVISTIC BAND-STRUCTURE AND SPIN-ORBIT-SPLITTING OF ZINCBLENDE-TYPE SEMICONDUCTORS [J].