Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O

被引：32

作者：

Klyachko, D

Rowntree, P

Sanche, L

机构：

[1] UNIV SHERBROOKE,DEPT CHIM,SHERBROOKE,PQ J1K 2R1,CANADA

[2] UNIV SHERBROOKE,DEPT MED NUCL & RADIOBIOL,SHERBROOKE,PQ J1K 2R1,CANADA

来源：

SURFACE SCIENCE | 1996年 / 346卷 / 1-3期

关键词：

amorphous surfaces; chemisorption; electron bombardment; molecule-solid reactions; silicon; water;

D O I：

10.1016/0039-6028(95)95066-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The oxidation of hydrogenated silicon surfaces has been induced by irradiation of physisorbed water molecules with low energy electrons (E(i) = 0-20 eV), and characterized using XPS. These results demonstrate that the initial step of the chemisorption process in the low incident energy regime is the resonant formation of the dissociative B-2(1) and (2)A(1) transient (H2O)(.-) states.

引用

页码：L49 / L54

页数：6