Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O

被引：32
作者：
Klyachko, D
Rowntree, P
Sanche, L
机构：
[1] UNIV SHERBROOKE,DEPT CHIM,SHERBROOKE,PQ J1K 2R1,CANADA
[2] UNIV SHERBROOKE,DEPT MED NUCL & RADIOBIOL,SHERBROOKE,PQ J1K 2R1,CANADA
来源：
SURFACE SCIENCE | 1996年 / 346卷 / 1-3期
关键词：
amorphous surfaces; chemisorption; electron bombardment; molecule-solid reactions; silicon; water;
D O I：
10.1016/0039-6028(95)95066-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The oxidation of hydrogenated silicon surfaces has been induced by irradiation of physisorbed water molecules with low energy electrons (E(i) = 0-20 eV), and characterized using XPS. These results demonstrate that the initial step of the chemisorption process in the low incident energy regime is the resonant formation of the dissociative B-2(1) and (2)A(1) transient (H2O)(.-) states.
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收藏
页码：L49 / L54
页数：6
相关论文
共 31 条
[1]   CHARGE TRAPPING BY H2O CONDENSED ONTO THIN-FILMS OF KR AND XE [J].
BASS, AD ;
SANCHE, L .
JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (04) :2910-2918
[2]   ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].
BECKER, RS ;
HIGASHI, GS ;
CHABAL, YJ ;
BECKER, AJ .
PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1917-1920
[3]   THERMAL AND PHOTOCHEMICAL OXIDATION OF SI(111) - DOPING EFFECT AND THE REACTION-MECHANISM [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW B, 1991, 44 (16) :9129-9132
[4]   ROLE OF O2 NEGATIVE-ION FORMATION IN LOW-ENERGY ELECTRON-INDUCED OXIDATION OF INP(110) [J].
CHEN, Y ;
LUO, YS ;
SEO, JM ;
WEAVER, JH .
PHYSICAL REVIEW B, 1991, 43 (05) :4527-4530
[5]  
CLOUTIER P, COMMUNICATION
[6]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[7]  
DI W, IN PRESS PHYS REV B
[8]  
ENGEL T, 1993, SURF SCI REP, V18, P91, DOI 10.1016/0167-5729(93)90016-I
[9]   HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF THIN SIO2 AND SI/SIO2 INTERFACES [J].
HATTORI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1528-1532
[10]   CHEMICAL ETCHING OF VICINAL SI(111) - DEPENDENCE OF THE SURFACE-STRUCTURE AND THE HYDROGEN TERMINATION ON THE PH OF THE ETCHING SOLUTIONS [J].
JAKOB, P ;
CHABAL, YJ .
JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (04) :2897-2909
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