Time-dependent transport through quantum dot in dissipative environments

被引:0
|
作者
Oh, JH [1 ]
Lee, HJ [1 ]
Hwang, SW [1 ]
Ahn, D [1 ]
机构
[1] Seoul Natl Univ, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea
关键词
time-dependent transport; single-electron transistor; dissipative environment;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Time-dependent currents through a quantum dot are investigated theoretically by adopting the geometry of radio-frequency single-electron transistors. Using the formalism taking non-adiabatic and dissipative-environment effects intro account, we solve the problem numerically and find that tunneling currents through the quantum dot have larger values in non-adiabatic cases than in adiabatic ones. Even though a coaxial-cable resistance of 50 Omega in a tank circuit is much smaller than a resistance quantum, the system is found to become dissipative as the quality factor increases.
引用
收藏
页码:S589 / S593
页数:5
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