Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array

被引:1
作者
Zhang, Yu [1 ,2 ,3 ]
Zhou, Songmin [1 ]
Li, Xun [1 ]
Wang, Xi [1 ]
Zhu, Liqi [1 ,2 ,3 ]
Lin, Chun [1 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
关键词
HgCdTe; detector; unstable pixels; surface passivation; dark current;
D O I
10.5573/JSTS.2022.22.2.93
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
pixels directly affect the imaging quality of the long-wavelength infrared (LWIR) plane-array (FPA) detector. This study investigates the unstable pixels of LWIR HgCdTe linear arrays with different passivation. According to the different fluctuation characteristics, the unstable pixels are classified into four types: trend-clear type (including the rising and declining pixels), fluctuating type, comb type, and telegraph type. The number of unstable pixels under different bias voltage is counted, which indicates that when the bias voltage is large enough, the number of unstable pixels can increase sharply. By comparing the characteristics of the unstable pixels of two linear arrays with different passivation, we find that the unstable pixels are sensitive to the surface passivation. In addition, the dark currents of unstable pixels and that of normal pixels are compared, inferring that there is no apparent connection between the cause of the instability of the pixels and that of the dark current.
引用
收藏
页码:93 / 100
页数:8
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