Heterostructure of TiO2 and macroporous silicon: The simplest relaxation oscillator

被引：4

作者：

Garzon-Roman, Abel ^{[1
]}

Quiroga-Gonzalez, Enrique ^{[2
]}

Zuniga-Islas, Carlos ^{[1
]}

机构：

[1] Natl Inst Astrophys Opt & Elect INAOE, Santa Maria Tonantzintla 72840, Mexico

[2] Benemerita Univ Autonoma Puebla, Inst Phys, San Claudio & 18 Sur,Bldg IF-1, Puebla 72570, Mexico

来源：

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES | 2021年 / 6卷 / 02期

关键词：

TiO2; Porous silicon; Relaxation oscillator; Tunnel diode effect; Temporal oscillations; POROUS SILICON; DEPOSITION; ENERGY; FILMS;

D O I：

10.1016/j.jsamd.2021.01.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A heterostructure composed of TiO2 and macroporous silicon in this study may represent the simplest relaxation oscillator ever reported. It consisted of macroporous Si with TiO2 grown on its pore walls, and metallic contacts. This is also the first relaxation oscillator of its kind. Such oscillators are commonly formed by a capacitor or an inductor and a feedback loop with a switching device operating with a threshold voltage. The dielectric characteristics of TiO2 (capacitive behavior) in combination with the tunnel diode characteristics of the heterostructure (presenting a negative differential resistance, when activated at a threshold voltage) are shown to give rise to the relaxation oscillations. (C) 2021 The Authors. Publishing services by Elsevier B.V. on behalf of Vietnam National University, Hanoi.

引用

页码：209 / 214

页数：6

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