A 224Gb/s DAC-Based PAM-4 Transmitter with 8-Tap FFE in 10nm CMOS

被引：52

作者：

Kim, Jihwan ^{[1
]}

Kundu, Sandipan ^{[1
]}

Balankutty, Ajay ^{[1
]}

Beach, Matthew ^{[2
]}

Kim, Bong Chan ^{[1
]}

Kim, Stephen ^{[1
]}

Liu, Yutao ^{[1
]}

Murthy, Savyassachi Keshava ^{[1
]}

Wali, Priya ^{[1
]}

Yu, Kai ^{[1
]}

Kim, Hyung Seok ^{[1
]}

Liu, Chuan-chang ^{[1
]}

Shin, Dongseok ^{[1
]}

Cohen, Ariel ^{[3
]}

Fan, Yongping ^{[1
]}

O'Mahony, Frank ^{[1
]}

机构：

[1] Intel, Hillsboro, OR 97124 USA

[2] Fdn Devices, Boston, MA USA

[3] Intel, Jerusalem, Israel

来源：

2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | 2021年 / 64卷

关键词：

D O I：

10.1109/ISSCC42613.2021.9365840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：126 / +

页数：3

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[3]

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[4]

Kim J, 2018, ISSCC DIG TECH PAP I, P102, DOI 10.1109/ISSCC.2018.8310204

[5]

Loi C, 2019, ISSCC DIG TECH PAP I, V62, P120, DOI 10.1109/ISSCC.2019.8662482

[6]

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[7]

Shin D., 2021, ISSCC

[8]

Toprak-Deniz Z, 2019, ISSCC DIG TECH PAP I, V62, P122, DOI 10.1109/ISSCC.2019.8662479

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