15-nm Channel Length MoS2 FETs with Single- and Double-Gate structures

We demonstrate single-and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (L-S/D) of 15 nm built on monolayer (t(ch)similar to 0.7 nm) and 4-layer (t(ch)similar to 3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with L-S/D=15 nm, had an I-on/I-off in excess of 10(6) and a minimum subthreshold swing (SSmin.) of 90 mV/dec. at V-DS=0.5 V. At L-S/D=1 mu m and V-DS=0.5 V, SSmin.=66 mV/dec., which is the best SS reported in MoS2 FETs, indicating the high quality of the interface and the enhanced channel electrostatics.